npn 2n3227 16/10/2012 comset semiconductors 1/3 silicon annular transistors the 2n3227 are silicon npn silicon annular transistors for low-current, high-speed switching applications. they are mounted in jedec to-18 metal. compliance to rohs absolute maximum ratings symbol ratings value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 6 v v ces collector-emitter voltage 40 v i c (p eak ) collector current 500 ma p d total device dissipation ambient temperature @ t c = 25 0.36 watts derating factore above 2.06 mw/c p d total device dissipation case temperature @ t c = 25 1.2 watts derating factore above 6.85 mw/c t j junction temperature +200 c t st g storage temperature range -65 to +200
npn 2n3227 16/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cut-off current i e = 0 ; v cb = 20v - - 0.2 a i e = 0 ; v cb = 20v t a = 150c - - 50 i cex collector cut-off curren v ce = 20v ; v eb ( off ) = 3v - - 0.2 i bl base cut-off curren v ce = 20v ; v eb ( off ) = 3v - - 0.5 bv cbo collector-base breakdown voltage i c =10 a ; i b = 0 40 - - v bv ebo emitter-base breakdown voltage i e =10 a ; i c = 0 6 - - v bv ceo collector-emitter breakdown voltage i c = 10 ma 20 - - v bv ces collector-emitter voltage i c =10 a ; i b = 0 40 - - v v ce(sat) collector-emitter saturation voltage i c =10 ma, i b =1.0 ma - - 0.25 v i c =100 m a, i b =10 ma - - 0.45 v be(sat) base-emitter saturation voltage i c =10 ma, i b =1.0 ma - - 0.85 v i c =100 m a, i b =10 ma - - 1.4 h fe dc current gain v ce =1.0 v, i c =10 ma 100 - 300 - v ce =1.0 v, i c =10 ma t a =-55c 40 - - v ce =1.0 v, i c =100 ma 30 - - h fe small signal current gain v ce =10 v, i c =10 ma f=100mhz 5 - - - t s storage time i c = i b1 = i b2 =10 ma - - 13 ns t off turn-off time i c =10 a;i b1 = 3 ma; i b2 =1.5 ma;v cc =3.0 v - - 18 t on turn-on time i c =10 a;i b1 = 3 ma v cc =3.0 v, v eb(off) = 1.5 v - - 12 c ob output capacitance v cb =5 v ; i e =0 , f=140khz - - 4.0 pf c ib input capacitance v be =1 v ; i c =0 , f=140khz - - 4.0 pf
npn 2n3227 16/10/2012 comset semiconductors 3/3 mechanical data case to-18 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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